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BS616UV4020 - Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable

BS616UV4020_58025.PDF Datasheet


 Full text search : Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable


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G-LINK Technology
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ONSEMI[ON Semiconductor]
BS62UV4000STI BS62UV4000 BS62UV4000EC BS62UV4000EI Ultra Low Power/Voltage CMOS SRAM 512K X 8 bit
BSI[Brilliance Semiconductor]
BS616UV8021FI BS616UV8021 BS616UV8021BC BS616UV802 Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 16100万8位开
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
N02L63W3AB25I N02L63W3AB5IT N02L63W3A 2 Mb Ultra-Low Power Asynchronous CMOS SRAM
2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48
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ON Semiconductor
 
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